october 2010 doc id 16798 rev 2 1/8 8 EMIF03-SIM03F3 3-line ipad?, emi filter including esd protection features emi symmetrical (i/o) low-pass filter high efficiency in emi/esd protection lead-free package very thin package high reliability offered by monolithic integration high reduction of parasitic elements through integration and wafer level packaging complies with the following standards iec 61000-4-2 level 4: ? 15 kv (air discharge) ? 8 kv (contact discharge) iec 61000-4-2 level 1: ? 2 kv (air discharge) ? 2 kv (contact discharge) etsi 102.221 (configuration fidi = 97) applications where emi filtering in es d sensitive equipment is required: mobile phones and communication systems computers, printers and mcu boards description the EMIF03-SIM03F3 chip is a very low capacitance emi filter designed to suppress emi/rfi noise in all systems subjected to electromagnetic interference. this filter includes esd protection circuitry, which prevents damage to the protected device when subjected to esd surges up to 15 kv. figure 1. pin configuration (bump side) figure 2. configuration tm : ipad is a trademark of stmicroelectronics. lead-free flip-chip package (8 bumps) 3 2 1 a c b rst in clk in gnd data in vcc rst ext clk ext data ext a2 b1 c1 c2 a3 b3 c3 b2 47 100 r1 r2 r3 100 gnd www.st.com
electrical characteristics EMIF03-SIM03F3 2/8 doc id 16798 rev 2 1 electrical characteristics figure 3. electrical char acteristics - definitions table 1. absolute maximum ratings (t amb = 25 c) symbol parameter value unit v pp internal pins (a3, b3, c3): esd discharge iec 61000-4-2, level 1, air discharge esd discharge iec 61000-4-2, level 1, contact discharge external pins (a2, b1, c1, c2): esd discharge iec 61000-4-2, level 4, air discharge esd discharge iec 61000-4-2, level 4, contact discharge 2 2 15 8 kv p d line resistance power dissipation at 70 c 60 mw t op operating temperature range - 40 to + 85 c t stg storage temperature range - 55 to 150 c table 2. electrical characteristics - values (t amb = 25 c) symbol test conditions min. typ. max. unit v br i r = 1 ma 14 v i rm v rm = 3 v per line 50 200 na r 1, r 3 tolerance 20% 80 100 120 r 2 tolerance 20% 37.6 47 56.4 c line v line = 0 v, v osc = 30 mv, f = 1 mhz (measured under zero light conditions) 81012pf symbol parameter v = breakdown voltage i = leakage current @ v v = stand-off voltage c = line capacitance br rm rm rm line i v v br v rm i r i rm i rm i r v rm v br
EMIF03-SIM03F3 electrical characteristics doc id 16798 rev 2 3/8 figure 8. analog crosstalk measurement a2 - c3 (30 khz < f < 6 ghz > 13.8 db) figure 4. attenuation measurement a2 - a3 figure 5. attenuation measurement b1 - b3 s21 (db) 100.0k 1.0m 10.0m 100.0m 1.0g -50.00 -40.00 -30.00 -20.00 -10.00 0.00 f (hz) -14.9 db @ 900 mhz -23.1 db @ 1.8 ghz s21 (db) 100.0k 1.0m 10.0m 100.0m 1.0g -50.00 -40.00 -30.00 -20.00 -10.00 0.00 f (hz) -11.6 db @ 900 mhz -18.4 db @ 1.8 ghz figure 6. attenuation measurement c1 - c3 figure 7. analog crosstalk measurement a2 - b3 (30 khz < f < 6 ghz > 11.8 db) s21 (db) 100.0k 1.0m 10.0m 100.0m 1.0g -50.00 -40.00 -30.00 -20.00 -10.00 0.00 f (hz) -14.8 db @ 900 mhz -22.8 db @ 1.8 ghz crosstalk (db) 100.0k 1.0m 10.0m 100.0m 1.0g -100.00 -80.00 -60.00 -40.00 -20.00 0.00 f (hz) 100.0k 1.0m 10.0m 100.0m 1.0g -100.00 -80.00 -60.00 -40.00 -20.00 0.00 f (hz) crosstalk (db)
electrical characteristics EMIF03-SIM03F3 4/8 doc id 16798 rev 2 figure 9. digital crosstalk measurements figure 10. esd response to iec 61000-4-2 (+15 kv air discharge) on one line 20 ns/div 1 v/div 500 mv/div in out 20 ns/div 175 mv t rise (10-90%) = 2.5 ns in out c2 c3 100 ns/div 20 v/div 100 ns/div 10 v/div figure 11. esd response to iec 61000-4-2 (-15 kv air discharge) on one line figure 12. line capacitance versus applied voltage in out c2 c3 100 ns/div 100 ns/div 10 v/div 10 v/div 0 3 6 9 12 15 18 21 0 0 1 2 3 4 3 6 9 12 15 18 21 c (pf) v (v) r
EMIF03-SIM03F3 ordering information scheme doc id 16798 rev 2 5/8 2 ordering information scheme figure 13. ordering information scheme emif yy - xxx zz fx emi filter number of lines information package x = resistance value (ohms) z = capacitance value / 10(pf) or 3 letters = application 2 digits = version f = flip chip x = 3: lead-free, pitch = 400 m
package information EMIF03-SIM03F3 6/8 doc id 16798 rev 2 3 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 14. package dimensions figure 17. flip-chip tape and reel specification figure 15. footprint figure 16. marking 1.14 mm 30 m 1.14 mm 30 m 255 m 40 400 m 40 400 m 40 170 m 170 m 605 m 55 220 m recommended 220 m recommended 260 m maximum solder stencil opening : copper pad diameter: solder mask opening: 300 m minimum x y x w z w dot, st logo ecopack status xx = marking yww = datecode (y = year ww = week) z = manufacturing location dot identifying pin a1 location user direction of unreeling all dimensions in mm 4.0 0.1 4.0 0.1 2.0 0.05 8.0 0.3 1.75 0.1 3.5 0.1 ? 1.55 0.1 0.69 0.05 1.24 0.20 0.02 st st st xxz yww xxz yww xxz yww e e e 1.24 st st st xxz yww xxz yww xxz yww e e e
EMIF03-SIM03F3 ordering information doc id 16798 rev 2 7/8 4 ordering information table 3. ordering information note: more information is availa ble in the application notes: an2348: ?stmicroelectronics 400 micro-metre flip chip: package description and recommendation for use? an1751: ?emi filters: recommendations and measurements? 5 revision history table 4. document revision history order code marking package weight base qty delivery mode EMIF03-SIM03F3 jh flip chip 1.8 mg 5000 tape and reel 7? date revision changes 03-may-2010 1 initial release. 12-oct-2010 2 updated figure 2 and value i rm in ta b l e 2 .
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